Effect of annealing temperature on optical and electrical properties of lead sulfide thin films |
| |
| Affiliation: | 1. Department of Physics, University College of Science, Osmania University, Saifabad, Hyderabad 500004, India;2. Department of Physics, Osmania University, Hyderabad 500007, India;3. School of Physics, Eternal University, Baru Sahib 173101, Himachal Pradesh, India;1. Vinayaka Mission’s Kirupananda Variyar Engineering College, Department of Physics, Salem 636308,Tamil Nadu, India;2. Government Arts College for Women, Department of Physics, Salem 636008,Tamil Nadu, India;1. School of Physics and Information Technology, Shaanxi Normal University, Xi’an 710062, PR China;2. Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, Kanagawa 226-8503, Japan;3. School of Material Science and Engineering, Shaanxi University of Science and Technology, Xi’an 710068, PR China;1. Department of Physics, College of Science, University of Ha''il, P.O Box-2440, Ha''il, Saudi Arabia;2. Advanced Functional Materials and Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia;3. School of Science and Technology, Glocal University, Saharanpur, 247001, Uttar Pradesh, India;1. Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay, Turkey;2. Department of Metallurgy and Material Engineering, Faculty of Technology, Mustafa Kemal University, 31034 Hatay, Turkey;1. Department of Mechanical and Aerospace Engineering, University of Virginia, 122 Engineer’s Way, P.O. Box 400746, Charlottesville, VA 22904, USA;2. Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, PO Box 400743, Charlottesville, VA 22904, USA |
| |
| Abstract: | Lead sulfide (PbS) thin films with 150 nm thickness were prepared onto ultra-clean quartz substrate by the RF-sputtering deposition method. Deposited thin films of PbS were annealed at different temperatures 100 °C, 150 °C, 200 °C, 250 °C and 300 °C. X-ray diffraction pattern of thin films revealed that thin films crystallized at 150 °C. Crystalline thin films had cubic phase and rock salt structure. The average crystallite size of crystalline thin films was 22 nm, 28 nm and 29 nm for 150 °C, 200 °C and 250 °C respectively. From 150 °C to 250 °C increase in annealing temperature leads to increase in crystallite arrangement. FESEM images of thin films revealed that crystallite arrangement improved by increasing annealing temperature up to 250 °C. Increase in DC electrical conductivity by increasing temperature confirmed the semiconductor nature of crystalline thin films. Increase in dark current by increasing annealing temperature showed the effect of crystallite arrangement on carrier transport. Photosensitivity decreased by increasing annealing temperature for crystalline thin films that it was explained at the base of thermal quenching of photoconductivity and adsorption of oxygen at the surface of thin films that leads to the formation of PbO at higher temperatures. |
| |
| Keywords: | Lead sulfide (PbS) Thin film RF-sputtering Photosensitivity |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
