Electrical analysis of Al/ZnO/p-Si,Al/PMMA/p-Si and Al/PMMA/ZnO/p-Si structures: Comparison study |
| |
| Affiliation: | 1. Gazi University, Graduate School of Natural and Applied Sciences, Ankara, Turkey;2. Sarakoy Nuclear Research and Training Centre, 06983 Saray, Kazan, Ankara, Turkey;1. Department of Physics, Utkal University, VaniVihar, Bhubaneswar 751004, India;2. IGCAR, Kalpakkam 603102, Tamilnadu, India;3. Institute of Physics, Bhubaneswar 751001, India;4. KIIT University, Bhubaneswar 751024, India;1. Department of Physics, Middle East Technical University, 06800 Ankara, Turkey;2. Department of Physics, Çanakkale Onsekiz Mart University, 17100 Çanakkale, Turkey;3. Center for Solar Energy Research and Applications (GÜNAM), METU, Ankara 06800, Turkey;1. Department of Physics, Faculty of Art & Science, Batman University, 72100 Batman, Turkey;2. Department of Science, Faculty of Education, Dicle University, 21280 Diyarbakir, Turkey;3. Science and Technology Application and Research Center, Dicle University, 21280 Diyarbakir, Turkey;1. Department of Physics, Faculty of Science, University of Tabuk, P.O. Box 741, Tabuk 71491, Saudi Arabia;2. Department of Physics, Faculty of Education at Al-Mahweet, Sana’a University, Al-Mahweet, Yemen;3. Department of Physics, Faculty of Science, Al-Fayoum University, Al-Fayoum 6351, Egypt;4. Department of Physics, Faculty of Education, Ain Shams University, Roxy Square 11757, Cairo, Egypt;1. Gazi University, Atatürk Vocational School, Çubuk, Ankara, Turkey;2. Saraykoy Nuclear Research and Training Centre, 06983 Saray, Kazan, Ankara, Turkey;3. Balikesir University, Faculty of Engineering-Architecture, Electrical-Electronics Department, Balikesir, Turkey;1. Laboratory of Clean Energy Chemistry and Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, PR China;2. University of Chinese Academy of Sciences, Beijing 100080, PR China;3. State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, PR China;4. Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics, Lanzhou 730000, PR China;5. Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan |
| |
| Abstract: | Al/ZnO/p-Si, Al/PMMA/p-Si and Al/PMMA/ZnO/p-Si structures were fabricated. Based on the measured current–voltage (C–V) and capacitance–voltage curves, the electrical characteristics of these heterostructures such as ideality factor, barrier height and series resistance of each structure were analyzed and then compared with those of Al/PMMA/ZnO/p-Si. According to C–V measurement, it was found that the Al/PMMA/ZnO/p-Si structure indicates the better electronic performance rather than other structures. The obtained results represent low series resistance (19.3 Ω) after coating with polymethyl methacrylate (PMMA) over ZnO/p-Si heterojunction structure for Al/PMMA/ZnO/p-Si heterostructure. |
| |
| Keywords: | Schottky barrier diode Organic thin film Electrical properties Heterojunction |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
