The investigation of Al-doped ZnO as an electron transporting layer for visible-blind ultraviolet photodetector based on n-ZnO nanorods/p-Si heterojunction |
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| Affiliation: | 1. Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei Key Laboratory of Ferroelectric and Dielectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, PR China;2. Key Lab of Acoustic and Photonic Materials and Devices of Ministry of Education, and Department of Electronic Science & Technology, School of Physical Science & Technology, Wuhan University, Wuhan 430072, PR China;1. Department of Physics, Middle East Technical University, 06800 Ankara, Turkey;2. Virtual International Scientific Research Centre, Baku State University, 1148 Baku, Azerbaijan;1. State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;2. Key Laboratory of New Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, China;1. School of Applied Physics, Faculty of Science and Technology, The National University of Malaysia (UKM), 43600 Bangi, Selangor, Malaysia;2. Nano-Optoelectronics Research and Technology Laboratory—School of Physics—Universiti Sains Malaysia (USM), 11800 Penang, P. Pinang, Malaysia;1. Research Centre of Materials Science, Beijing Institute of Technology, Beijing, 100081, People’s Republic of China;2. Department of Physics, COMSATS Institute of Information Technology, Islamabad, 44000, Pakistan |
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| Abstract: | An n-ZnO nanorods/p-Si heterojunction photodetector with Al-doped ZnO (AZO) as an electron transporting layer was fabricated. The heterojunction with 20 nm AZO film showed a better characteristic than that of the device without AZO, and it displays a rectification ratio of 8470 at ±3 V and a turn-on voltage of 1.8 V. Also, based on spectral responsivity measurement, the device with AZO coating showed higher responsivity and better visible-blind detectivity than those without AZO, and the peak responsivity of the photodetector with AZO was as high as ~0.49 A/W at 354 nm. Furthermore, the photodetector with AZO layer showed a bigger UV–visible responsivity ratio (R354 nm / R546 nm) than that of the photodetector without AZO coating at −2 V. The role of AZO layer was illustrated through energy band theory and the electron transport mechanism. |
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| Keywords: | Al-doped ZnO Visible-blind ZnO nanorods Ultraviolet Photodetector |
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