Fabrication,structural and electrical characterization of AlNi2Si based heterojunction grown by LPE |
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| Affiliation: | 1. Physics Department, National Research Center, Dokki, Cairo, Egypt;2. Department of Physics, Faculty of Science and Arts, Aljouf University, Aljouf, Saudi Arabia;3. Thin Film Laboratory, Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt;1. College of Science and Technology, North China Electric Power University, Baoding 071051, China;2. College of Physics Science and Technology, Hebei University, Baoding 071002, China;1. Universidade Estadual Paulista “Júlio de Mesquita Filho” – UNESP, Programa de Pós-Graduação em Ciência e Tecnologia de Materiais, POSMAT, Bauru, SP, Brazil;2. Universidade Federal do Ceará – UFC, Departamento de Física, Fortaleza, CE, Brazil;3. Universidade Estadual Paulista “Júlio de Mesquita Filho” – UNESP, Departamento de Física, Bauru, SP, Brazil;1. Department of Chemistry, Vivekanandha College of Engineering for women, Namakkal, Tamil Nadu, India;2. Department of Chemistry, Government Arts College, Udumalpet 642126, Tamil Nadu, India;3. Department of Biotechnology, School of Life Sciences, Karpagam University, Eachanari Post, Coimbatore 641021, Tamil Nadu, India;4. Department of Chemistry, Coimbatore Institute of Technology, Coimbatore, Tamil Nadu, India;5. Department of Physics, Adhiyaman College of Engineering, Hosur, Tamil Nadu, India;1. Thin Film Laboratory, Semiconductor & Nano-ScienceLabs., Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo, Egypt;2. Department of Physics, Faculty of Science and Arts, Aljouf University, Aljouf, Saudi Arabia;3. Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia;4. Centre of Nanotechnology, King Abdul Aziz University, Jeddah, Saudi Arabia;1. Physics Department, Faculty of Science, Alexandria University, Alexandria, Egypt;2. Physics Department,Faculty of Science and Arts, Aljouf University, Aljouf, Saudi Arabia;3. Thin Film Laboratory, Physics Department, Faculty of Education, Ain Shams University, Heliopolis, Roxy, Cairo 11757, Egypt;4. Physics Department, College of Science, Al Imam Mohammad Ibn Saud Islamic University, IMSIU, Riyadh, Saudi Arabia;5. Electronic Materials Department, Advanced Technology and New Material Institute, City for Scientific Research and Technology Applications, New Borg El Arab City 21934, Alexandria, Egypt |
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| Abstract: | This work elucidates the applicability for Liquid-Phase Epitaxy (LPE) to grow epilayers of AlNi2Si on single crystalline Si with a good crystalline quality and low series resistance. Surface morphology and crystalline structural characteristics of the heterojunction were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. Temperature dependence of the current–voltage (I–V) characteristics is studied to elucidate the predominant conduction mechanism in the temperature range 305–370 K. Heterojunction parameters such as ideality factor, series resistance, barrier height show temperature dependence in the desired temperature range. Cheung functions are applied for determination the heterojunction parameters and compared with each other. Temperature dependence of capacitance–voltage (C–V) characteristics was considered. The built-in potential, net carrier concentration, maximum barrier height, maximum barrier field and the width of the depletion region obtained from the C–V measurements were studied as a function of temperature. |
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| Keywords: | LPE Abrupt heterojunction |
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