Effect of AlN buffer layer thickness on the properties of GaN films grown by pulsed laser deposition |
| |
Affiliation: | 1. Universidade Estadual de Ponta Grossa (UEPG), Av. General Carlos Cavalcanti 4748, 84030-900 Ponta Grossa, PR, Brazil;2. Instituto de Desenvolvimento e Tecnologia (LACTEC), Cel. Francisco H. dos Santos, 81531-980 Curitiba, PR, Brazil;3. Universidade Federal do Paraná (UFPR), Cel. Francisco H. dos Santos, 81531-980 Curitiba, PR, Brazil;4. Grupo Neoenergia (COELBA), Edgard Santos, 300, 41181-900 Narandiba, Salvador, BA, Brazil |
| |
Abstract: | The GaN films are grown by pulsed laser deposition (PLD) on sapphire, AlN(30 nm)/Al2O3 and AlN(150 nm)/Al2O3, respectively. The effect of AlN buffer layer thickness on the properties of GaN films grown by PLD is investigated systematically. The characterizations reveal that as AlN buffer layer thickness increases, the surface root-mean-square (RMS) roughness of GaN film decreases from 11.5 nm to 2.3 nm, while the FWHM value of GaN film rises up from 20.28 arcmin to 84.6 arcmin and then drops to 31.8 arcmin. These results are different from the GaN films deposited by metal organic chemical vapor deposition (MOCVD) with AlN buffer layers, which shows the improvement of crystalline qualities and surface morphologies with the thickening of AlN buffer layer. The mechanism of the effect of AlN buffer layer on the growth of GaN films by PLD is hence proposed. |
| |
Keywords: | GaN films AlN buffer layer Pulse laser deposition |
本文献已被 ScienceDirect 等数据库收录! |
|