| SnO2导电薄膜的制备与研究 |
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| 引用本文： | 王磊,杜军,毛昌辉,杨志明,熊玉华.SnO2导电薄膜的制备与研究[J].仪表技术与传感器,2006(2):6-8. |
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| 作者姓名： | 王磊 杜军 毛昌辉 杨志明 熊玉华 |
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| 作者单位： | 北京有色金属研究总院能源与材料技术中心,北京,100088 |
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| 摘 要： | 采用R．F反应溅射法制备SnO2导电薄膜，用XRD、AFM、XPS研究了薄膜的结构和组成对导电性能的影响。XRD和AFM研究表明，随着衬底温度的增加，SnO2薄膜从非晶向多晶结构转变，表面粗糙度减弱，薄膜的表面电阻大幅增加。采用XPS对薄膜表面成分进行分析，时不同衬底温度下Sn3d5／2拟合发现，薄膜表面存在Sn^2＋和Sn^4＋两种混合价态。随着村底温度的增加，Sn3d5／2能谱位置与峰宽并没有变化。对O1s能谱进行Gaussian拟合后发现，薄膜表面的氧以晶格氧（略）和化学吸附氧（Oahs^-）两种方式存在。实验证明，Oabs^-含量与SnO2表面电阻成正比关系。
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| 关 键 词： | 导电性能 SnO2薄膜 溅射 衬底温度 |
| 文章编号： | 1002-1841（2006）02-0006-03 |
| 收稿时间： | 2004-11-21 |
| 修稿时间： | 2005-10-31 |
Preparation and Properties of SnO2 Conduction Film by R.F.Sputiering |
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| WANG Lei,DU Jun,MAO Chang-hui,YANG Zhi-ming,XIONG Yu-hua.Preparation and Properties of SnO2 Conduction Film by R.F.Sputiering[J].Instrument Technique and Sensor,2006(2):6-8. |
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| Authors: | WANG Lei DU Jun MAO Chang-hui YANG Zhi-ming XIONG Yu-hua |
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| Affiliation: | Research Center of Energy Materials and Engineer, General Research Institute for Nonferrous Metals, Betjing 100088, China |
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| Abstract: | Tin oxide thin films have been deposited on Si(100) substrates by R.F.reactive sputtering technique.Surface Appearance and compositions were studied by AFM,XPS and XRD.The results revealed that the SnO_(2)film was the multi-crystal constructive n-type semiconductor whose carrier was oxygen hole.Sn had double electrovalence(Sn~(2+)and Sn~(4+)) in the tin oxide film.Accordingly,Oxygen 1s peak of SnO_(2)film was analyzed by Gaussian function.The results showed that surface oxygen ware composed of lattice oxygen(O~(2-)_(lat)) and absorb oxygen(O~(-)_(abs)).With the increasing of substrate temperature,Proportion of O~(-)_(abs)and surface resistance of SnO_(2) film increased. |
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| Keywords: | conductive properties tin oxide thin film R F sputtering substrate temperature |
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