High field effect mobility deuterated amorphous silicon thin-filmtransistors based on the substitution of hydrogen with deuterium |
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Authors: | Jiun-Lin Yeh Si-Chen Lee |
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Affiliation: | Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei ; |
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Abstract: | The characteristics of amorphous silicon hydrogen and deuterium thin-film transistors (a-Si:H/a-Si:D TFT) were studied. The deuterated and hydrogenated amorphous silicon channels were prepared by first annealing the as-deposited a-Si:H layer at 550°C in N2 environment to expel all the hydrogen atoms out of the films, then the D 2 or H2 plasma were applied to treat the amorphous silicon layers. The field effect mobility of the conventional hydrogen TFT is usually smaller than 1 cm2/V-s. It was found that substitution of hydrogen with deuterium improved the field effect mobility of the TFT. The maximum field effect mobility of a-Si:D TFT obtained from the saturation region was 1.77 cm2/V-s |
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