Epitaxy of gallium nitride in semi-polar direction on silicon |
| |
Authors: | V N Bessolov Yu V Zhilyaev E V Konenkova N K Poletaev Sh Sharofidinov M P Shcheglov |
| |
Affiliation: | 1.Ioffe Physical Technical Institute,Russian Academy of Sciences,St. Petersburg,Russia |
| |
Abstract: | The idea of a new method for growing gallium nitride (GaN) epilayers on (100)-oriented silicon substrates is disclosed. It
has been experimentally established that the formation of a special oriented thin (600 nm) buffer layer of aluminum nitride
(AlN) by hydride-chloride vapor-phase epitaxy (HVPE) makes possible the growth of GaN in semi-polar direction. For the best
epilayers obtained by this method, the X-ray rocking curve half-width is ωθ(0004) = 30 arcmin. The photoluminescence spectra of GaN films measured at 77 K exhibit both exciton and donor-acceptor recombination
bands. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |