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Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction |
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| Authors: | Adelmo Ortiz-Conde,Francisco J. Garcí a-Sá nchez,Denise C. Lugo Muñ oz,Ching-Sung Ho |
| Affiliation: | a Solid-State Electronics Laboratory, Simón Bolívar University, Caracas 1080, Venezuela b Powerchip Semicond. Corp., Hsinchu Science-Based Industrial Park, Hsinchu, Taiwan, ROC c School of Electrical Engineering and Computer Science, University of Central Florida, Orlando, FL 32816-2450, USA d Department of ISEE, Zhejiang University, Hangzhou, China |
| Abstract: | A new procedure is presented to separate the effects of source-and-drain series resistance and mobility degradation factor in the extraction of MOSFET model parameters. It requires only a single test device and it is based on fitting the ID(VGS, VDS) equation to the measured characteristics. Two types of bidimensional fitting are explored: direct fitting to the drain current and indirect fitting to the measured source-to-drain resistance. The indirect fitting is shown to be advantageous in terms of fewer number of iterations needed and wider extent of initial guess values range. |
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