The effects of vacuum annealing on the structure of VO2 thin films |
| |
| Authors: | Y.L. Wang M.C. Li L.C. Zhao |
| |
| Affiliation: | Key Laboratory of Precision Hot-Forming for National Defense Science and Technology, School of Material Science and Engineering, Harbin Institute of Technology, P.O. Box 428, Harbin 150001, China |
| |
| Abstract: | Noncrystalline VOx thin films were deposited onto p-doped Si (100) substrates at 400 °C using magnetron sputtering. By vacuum annealing, we obtained polycrystalline VO2 thin films with two different structures under a variety of annealing conditions. With the annealing temperature increasing and the annealing time developing, structures of the films underwent the following transformation: amorphous structure→metastable VO2 (B)→VO2 (B) + VO2 (M). Vacuum annealing is useful of acquiring VO2 thin films with high surface quality, but too high annealing temperature (500 °C) and too long time (15 h) are harmful, which make the surface degenerate. |
| |
| Keywords: | 81.1577.Cd 36.20.Ng 81.40.Ef |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
