Thermal stability and oxidation resistance of Ti-B-N, Ti-Cr-B-N, Ti-Si-B-N and Ti-Al-Si-B-N films

Films Ti-B-xN-y(Al,Si,Cr) with different compositions x = 25-33 at.% and y = 11-14 at.% were deposited by DC magnetron sputtering of TiBN, TiCrB, TiSiB, and TiAlSiB composite targets in a gaseous mixture of argon and nitrogen. The structure and phase composition of films were studied by means of X-ray diffraction, transmission electron microscopy, Raman and X-ray photoelectron spectroscopy. To evaluate the thermal stability and oxidation resistance, the Ti-B-N, Ti-Cr-B-N, Ti-Si-B-N, and Ti-Al-Si-B-N films were annealed at 600, 800, and 1000 °C in vacuum and at 600, 700, 800, and 900 °C in air, respectively. The elemental depth profiles for the oxidized films were obtained by focused ion beam equipped with secondary ion mass spectrometer. The Ti-B-N and Ti-Cr-B-N films demonstrated thermal stability up to 1000 °C. A threshold temperature of 800 °C was determined, below which these films acted as a diffusion barrier for Ni diffusion from metallic substrate. Annealing in the range of 600-800 °C improved mechanical and tribological characteristics of the films. The Ti-Cr-B-N and Ti-Al-Si-B-N films were more resistant against high-temperature oxidation than the Ti-B-N and Ti-Si-B-N films.