Secondary electron suppression in nitrogen plasma ion implantation using a low DC magnetic field

Experiments aiming at the reduction or even total suppression of secondary electrons during the plasma immersion ion implantation were carried out using a plasma device with low DC magnetic field. Comparison of ion implantations in B = 0 and another case with B = 43 G, indicated that the magnetic field was effective to suppress SE flow in the direction transversal to B but only partial suppression was attained in the longitudinal direction. However, these results are already significant since the efficiency of implantation was increased and the flow of SE to the walls became localized to the regions with B crossing the walls.