Plasma biasing to control the growth conditions of diamond-like carbon |
| |
Authors: | André Anders Nitisak Pasaja Sunnie HN Lim Tim C Petersen |
| |
Affiliation: | a Lawrence Berkeley National Laboratory, University of California, Berkeley, California 94720, USA b Physics Department, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand c School of Physics A28, University of Sydney, Sydney, New South Wales 2006, Australia d Australian Key Centre for Microscopy and Microanalysis, University of Sydney, Sydney, New South Wales 2006, Australia |
| |
Abstract: | It is well known that the structure and properties of diamond-like carbon, and in particular the sp3/sp2 ratio, can be controlled by the energy of the condensing carbon ions or atoms. In many practical cases, the energy of ions arriving at the surface of the growing film is determined by the bias applied to the substrate. The bias causes a sheath to form between substrate and plasma in which the potential difference between plasma potential and surface potential drops. In this contribution, we demonstrate that the same results can be obtained with grounded substrates by shifting the plasma potential. This “plasma biasing” (as opposed to “substrate biasing”) is shown to work well with pulsed cathodic carbon arcs, resulting in tetrahedral amorphous carbon (ta-C) films that are comparable to the films obtained with the conventional substrate bias. To verify the plasma bias approach, ta-C films were deposited by both conventional and plasma bias and characterized by transmission electron microscopy (TEM) and electron energy loss spectrometry (EELS). Detailed data for comparison of these films are provided. |
| |
Keywords: | Diamond-like carbon films Substrate bias Plasma bias Electron energy loss spectroscopy Transmission electron microscopy |
本文献已被 ScienceDirect 等数据库收录! |
|