Fabrication and characterization of Si-MOSFET's with PECVDamorphous Ta2O5 gate insulator |
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| Authors: | Autran J-L Devine R Chaneliere C Balland B |
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| Affiliation: | Lab. de Phys. de la Matiere, Inst. Nat. des Sci. Appliquees, Villeurbanne; |
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| Abstract: | Silicon MOS transistors having amorphous Ta2O5 insulator gates have been fabricated. The Ta2O5 films were deposited using a low pressure (a few mtorr) plasma-enhanced CVD process in a microwave (2.45 GHz) excited electron cyclotron resonance reactor. The source gas was TaF5. Electrical characteristics of p-channel Al gate transistors are presented |
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