折射率缓变波导层分别限制单量子阱半导体激光器的模式分析

本文提出一种能够精确分析波导层具有任意折射率分布而且收敛性好的分层逼近迭代法,研究了折射率缓变波导层分别限制单量子阱(GRIN-SCH-SQW)中波导层的折射率分布对近场分布,近场束宽,光限制因子,远场分布,远场角,激射阈值的作用,并与延伸抛物型近似解和折射率突变波导层分别限制单量子阱半导体激光器进行较全面的比较.结果表明:延伸抛物型近似不宜普遍采用;采用适当的缓变波导层可进一步降低阈值(例如采用抛物型或线性分布),或进一步减小远场角(例如采用倒抛物型分布).

Mode Analysis of Graded-Index Separate-Confinement-Heterostructure Single-Quantum-Well (GRIN-SCH-SQW) Semiconductor Lasers

A method of lamination-iteration approach for analyzing the GRIN-SCH-SQW semicon-ductor lasers with guided layers of any index-profile has been proposed. The effects of theguided layer and its index-profile on the near-field pattern and its beam width, the far-fieldpattern and its angular width, optical confinement factor, and lasing threshold have been in-vestigated by the method, and compared with that obtained by the extended parabolic appro-ximation and that by abrupt guided layer structure.It is shown that the extended parabolicapproximation is not feasible for general application in this study.By the use of guided layerswith proper index-profile, the lasing threshold may be decreased further (e. g. in cases ofparabolic and linear profile), or the far-field angular width may be decreased further (e. g.in case of inverted parabolic profile).