Millimeter-wave ion-implanted gradedInxGa1-xAs MESFETs grown by MOCVD |
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Authors: | Wang GW Feng M Kaliski R Liaw YP Lau C Ito C |
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Affiliation: | Ford Microelectron. Inc., Colorado Springs, CO ; |
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Abstract: | The authors present the fabrication and characterization of ion-implanted graded InxGa1-xAs/GaAs MESFETs. The InxGa1-xAs layers are grown on GaAs substrates by MOCVD (metal-organic chemical vapor deposition) with InAs concentration graded from 15% at the substrate to 0% at the surface. 0.5-μm gate MESFETs are fabricated on these wafers using silicon ion implantation. In addition to improved Schottky contact, the graded InxGa 1-xAs MESFET achieves maximum extrinsic transconductance of 460 mS/mm and a current-gain cutoff frequency ft of 61 GHz, which is the highest ever reported for a 0.5-μm gate MESFET. In comparison, In0.1Ga0.9As MESFETs fabricated with the same processing technique show an ft of 55 GHz |
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