| 垂直磁场中GaAs-Ga_(1-x)Al_xAs量子阱内类氢杂质束缚能计算 |
| |
| 引用本文： | 李树深,焦善庆. 垂直磁场中GaAs-Ga_(1-x)Al_xAs量子阱内类氢杂质束缚能计算[J]. 半导体学报, 1990, 11(9): 647-653 |
| |
| 作者姓名： | 李树深 焦善庆 |
| |
| 作者单位： | 河北师范大学物理系 石家庄(李树深)，西南交通大学物理系 成都(焦善庆) |
| |
| 摘 要： | 应用一维化方法和有效质量近似计算了在垂直于界面的磁场作用下量子阱内类氢杂质基态和低激发态的束缚能,并考虑到GaAs和GaAlAs中电子具有不同的有效质量和不同的介电常数,所得计算结果与实验较好相符。
|
Binding Energy Calculation of Hydrogenic Impurities in GaAs-Ga_(1-x)Al_xAs Quantum Well in Vertical Magnetic Field |
| |
| Li Shushen/. Binding Energy Calculation of Hydrogenic Impurities in GaAs-Ga_(1-x)Al_xAs Quantum Well in Vertical Magnetic Field[J]. Chinese Journal of Semiconductors, 1990, 11(9): 647-653 |
| |
| Authors: | Li Shushen/ |
| |
| Affiliation: | Li Shushen/Department of Physics,Hebei Teacher's University,Shijiazhuang,HebeiJiao Shanqing/Department of Physics,South-West Jiaotong University,Chengduo,Sichuan |
| |
| Abstract: | The binding energies of the ground state and the low-lying excited states of hydrogenic impuritiesin quantum well in a vertical magnetic fielo have been calculated applying the methodof one dimensionalization and the effective mass approximation. In calculation, the effects dueto different effective masses and dielectric constants in GaAs-GaAlAs layers are included. Theresults agree well with the experimental results. |
| |
| Keywords: | QW Superlattice GaAs GaAlAs |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
