| InAlAs/InGaAs/InP HEMT欧姆接触研究 |
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| 引用本文： | 康耀辉,林罡,李拂晓. InAlAs/InGaAs/InP HEMT欧姆接触研究[J]. 固体电子学研究与进展, 2008, 28(1): 145-148 |
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| 作者姓名： | 康耀辉 林罡 李拂晓 |
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| 作者单位： | 南京电子器件研究所单片集成电路与模块国家级重点实验室,南京,210016;南京电子器件研究所单片集成电路与模块国家级重点实验室,南京,210016;南京电子器件研究所单片集成电路与模块国家级重点实验室,南京,210016 |
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| 摘 要： | 应用Au/Ge/Ni系金属在InAlAs/InGaAs/InP HEMT上成功制作了良好的合金欧姆接触。采用WN和Ti双扩散阻挡层工艺优化欧姆接触,在样品上获得了最低9.01×10-8Ω.cm2的比接触电阻,对应的欧姆接触电阻为0.029Ω.mm。同时,在模拟后续工艺环境的20min250°C热处理后,器件的欧姆接触性能无显著变化,表明其具有一定的温度稳定性。
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| 关 键 词： | 磷化铟 欧姆接触 温度稳定性 |
| 文章编号： | 1000-3819(2008)01-145-04 |
| 修稿时间： | 2006-05-10 |
Design and Fabrication of Ohmic Contact to InAlAs/InGaAs/InP HEMT |
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| KANG Yaohui,LIN Gang,LI Fuxiao. Design and Fabrication of Ohmic Contact to InAlAs/InGaAs/InP HEMT[J]. Research & Progress of Solid State Electronics, 2008, 28(1): 145-148 |
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| Authors: | KANG Yaohui LIN Gang LI Fuxiao |
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| Affiliation: | KANG Yaohui LIN Gang LI Fuxiao(National Key Laboratory of Monolithic Integrated Circuits , Modules,Nanjing Electronic Devices Institute,Nanjing,210016,CHN) |
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| Abstract: | This paper reports the fabrication technique of ohmic contact to InAlAs/InGaAs/InP HEMT.By using the developed rapid thermal annealing(RTA)process with WN and Ti double blocking layers,a minimum contact resistance of 0.029 Ω·mm and a specific contact resistance of 9.01×10-8 Ω·cm2 have been achieved for InP HEMT.At the same time,the sample's ohmic contact resistance hasn't prominent change after heat treatment.The experimental result indicates that ohmic contact has the better thermal stability. |
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| Keywords: | InP ohmic contact thermal stability |
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