| A Systematical Approach for Noise in CMOS LNA |
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| 引用本文： | Feng,Dong,an,Shi,Bingxue. A Systematical Approach for Noise in CMOS LNA[J]. 半导体学报, 2005, 26(3): 487-493 |
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| 作者姓名： | Feng Dong an Shi Bingxue |
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| 作者单位： | 清华大学微电子学研究所 北京100084(冯东)，清华大学微电子学研究所 北京100084(石秉学) |
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| 摘 要： | A systematic approach is used to analyze the noise in CMOS low noise amplifier(LNA),including channel noise and induced gate noise in MOS devices.A new analytical formula for noise figure is proposed.Based on this formula,the impacts of distributed gate resistance and intrinsic channel resistance on noise performance are discussed.Two kinds of noise optimization approaches are performed and applied to the design of a 5.2GHz CMOS LNA.
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| 关 键 词： | 放大器噪声 沟道噪声 沟道电阻 感应栅噪声 低噪声放大器 噪声优化 amplifier noise channel noise channe resistance induced gate noise low noise amplifier noise optimization CMOS low noise amplifier 低噪声放大器 系统研究方法 Noise Approach noise optimization design impacts distributed induced gate noise intrinsic channel noise resistance performance Based analytical formula noise figure MOS devices systematic approach |
A Systematical Approach for Noise in CMOS LNA |
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| FENG Dong,Shi Bingxue. A Systematical Approach for Noise in CMOS LNA[J]. Chinese Journal of Semiconductors, 2005, 26(3): 487-493 |
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| Authors: | FENG Dong Shi Bingxue |
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| Abstract: | A systematic approach is used to analyze the noise in CMOS low noise amplifier(LNA),including channel noise and induced gate noise in MOS devices.A new analytical formula for noise figure is proposed.Based on this formula,the impacts of distributed gate resistance and intrinsic channel resistance on noise performance are discussed.Two kinds of noise optimization approaches are performed and applied to the design of a 5.2GHz CMOS LNA. |
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| Keywords: | amplifier noise channel noise channel resistance induced gate noise low noise amplifier noise optimization |
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