Simultaneous formation of silicide ohmic contacts and shallow p+-n junctions by ion-beam mixing and rapid thermal annealing |
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Abstract: | Low-resistivity, uniform molybdenum silicide layers, and shallow p+-n junctions with good electrical characteristics have been formed using ion-beam mixing and rapid thermal annealing (RTA). Detailed reverse leakage current data on RTA annealed diodes, which were formed by implanting BF2+into Si substrates through the molybdenum films deposited on Si, are presented. The process has a great potential for CMOS fabrication with self-aligned silicided source, drain, and gate. |
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