| BaWO4掺杂对BMT陶瓷介电性能的影响 |
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| 引用本文： | 彭森,吴孟强,肖勇,陈黎,姜锐.BaWO4掺杂对BMT陶瓷介电性能的影响[J].电子元件与材料,2011,30(11):1-4. |
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| 作者姓名： | 彭森 吴孟强 肖勇 陈黎 姜锐 |
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| 作者单位： | 1. 邵阳学院信息工程系,湖南邵阳,422000
2. 电子科技大学电子薄膜与集成器件国家重点实验室,四川成都,610054 |
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| 摘 要： | 采用传统电子陶瓷工艺合成了BaWO4掺杂的Ba(Mg1/3Ta2/3)O3( BMT)微波介质陶瓷,研究了质量分数w(BaWO4)从2％～8％变化对BMT微波介质陶瓷结构和微波特性的影响.实验结果表明:添加少量的BaWO4能明显改善BMT陶瓷的烧结性能,当w(BaWO4)=4％时,BMT陶瓷的烧结温度由纯相时的1650...
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| 关 键 词： | Ba(Mg1/3Ta2/3)O3 掺杂 介电性能 微波介质陶瓷 |
Effect of BaWO4 doping on the microwave dielectric properties of BMT microwave ceramics |
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| PENG Sen,WU Mengqiang,XIAO Yong,CHEN Li,JIANG Rui.Effect of BaWO4 doping on the microwave dielectric properties of BMT microwave ceramics[J].Electronic Components & Materials,2011,30(11):1-4. |
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| Authors: | PENG Sen WU Mengqiang XIAO Yong CHEN Li JIANG Rui |
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| Affiliation: | 1.Department of Information Engineering,Shaoyang University,Shaoyang 422000,Hunan Province,China;2.State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China) |
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| Abstract: | BaWO4 doped Ba(Mg1/3Ta2/3)O3(BMT) microwave dielectric ceramics were prepared using the conventional electronic ceramic process.The effects of BaWO4 addition on the structure and microwave properties of BMT ceramics were investigated as a function of mass fraction of BaWO4 from 2% to 8%.It is found that the sinterability of BMT ceramics could be improved greatly by the addition of small amount of BaWO4.Compared with pure BMT ceramics,the BMT ceramic doped with 4%(mass fraction) BaWO4 shows a lower sintering temperature decreasing from 1 650 ℃ above to 1 400 ℃ with a bulk density of 7.562 g/cm3 and a relative density of 99%.In the meatime,the BMT ceramic exhibits superior microwave dielectric properties: εr =26.7,Q?f = 98 THz(8 GHz),τf =6.5×10–6 /℃. |
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| Keywords: | Ba(Mg1/3Ta2/3)O3 doping dielectric properties microwave dielectric ceramics |
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