基于MEMS工艺的硅基红外辐射源研制

利用微机电系统( MEMS)制造工艺制备出了一种硅基红外辐射源.该辐射源采用单晶硅为衬底,通过直流溅射沉积Pt/Ti薄膜,并利用深反应离子刻蚀与湿法腐蚀工艺制备隔离槽和释放支撑层.研究了支撑层厚度对红外辐射源辐射特性的影响.结果表明,随着支撑层厚度的减小,红外辐射源的调制驱动电压会降低.当支撑层厚度为1μm时,辐射源调...

Development of a Si-based infrared radiation source based on MEMS technique

A kind of Si-based infrared radiation source was prepared by the micro-electro-mechanical systems(MEMS) fabrication technique.To prepare the radiation source,Pt/Ti film was deposited on single crystal silicon substrate by DC sputtering,and then the isolated slot and the carrier substrate were prepared by deep reactive ion etching(DRIE) and wet etching.The effect of the thickness of carrier substrate on the radiation characteristics of the prepared infrared radiation source was studied.The results show that the driving voltage of the infrared radiation source reduces with decreasing carrier substrate thickness.When the thickness of carrier substrate is 1μm,the modulation frequency of the radiation source reaches 13 Hz at a modulation depth of 50%,indicating that the frequency-response characteristic of the prepared infrared radiation source basically meets the application requirements of the infrared sensor system.