High efficiency a-Si:H p-i-n solar cell using a SnO2/glass substrate

Dependence of conversion efficiency of a-Si:H p-i-n solar cells on the material of transparent conductive film substrates was studied. Irrespective of preparation method of the transparent conductive film, SnO2films gave an advantage over ITO films for high efficiency cell production by a parallel plate electrode type plasma C.V.D. equipment. A conversion efficiency of 7.19% was achieved by optimizing preparation conditions of the SnO2film and the a-Si:H film.