Electronic density of states at the interface between silicon and lead borosilicate glass

The density-of-states distribution in the band gap of Si at the interface between Si and lead borosilicate (SiO₂-PbO-B₂O₂-Al₂O₃-Ta₂O₅) glass was assessed byC-V measurements. It is shown that reducing the temperature at which the passivating glass coating is applied decreases the interfacial density of states to a level comparable with the density of surface states on thermally oxidized Si.