半导体桥等离子体温度的实验研究

基于原子发射光谱双谱线法测温原理,对半导体桥(SCB)等离子体温度进行实时瞬态测定;实验研究了放电脉冲条件下等离子体温度的变化规律及不同脉冲能量对等离子体温度的影响.结果表明:充电电容为22 μF,初始放电电压由21 V增大到63 V,等离子体峰值温度由2 000 K上升至6 200 K;放电电压为39 V,充电电容由...

Experimental Investigation on the Semiconductor Bridge Plasma Temperature

The plasma temperature of the semiconductor bridge(SCB) was measured in real-time based on the relative intensity ratio of two lines of atomic emission spectrum.In the case of different discharge pulses,the plasma temperature and the influence of pulse energy on it were studied.The results show that the plasma peak temperature rises gradually with the increase in initial discharging voltage and capacitance.When the charging capacitance is 22 μF and the initial discharging voltage increases from 21 V to 63 V,the plasma temperature rises from 2 000 K to 6 200 K .The plasma peak temperature rises from 2 200 K to 3 800 K when the capacitance increases from 6.8 μF to 100 μF with the voltage of 39 V.The change of pulse discharge has a very slight effect on the plasma temperature at the onset of late discharge.The change of discharging voltage has a greater effect on the plasma temperature than the changing capacitance in view of the change of plasma temperature with the pulse energy.The results provide some experimental basis for the further research on ignition and detonation mechanisms.