Inelastic scattering of hot electrons by neutral donors in heavily silicon-doped GaAs/AlAs quantum wells |
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| Authors: | I A Akimov V F Sapega D N Mirlin B P Zakharchenya V M Ustinov A E Zhukov A Yu Egorov A A Sirenko |
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| Affiliation: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia;(2) Department of Physics, Pennsylvania State University, University Park, PA 16802, USA |
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| Abstract: | The energy and momentum relaxation of hot electrons in n-type GaAs/AlAs quantum wells is studied. Hot photoluminescence due to the recombination of hot electrons with holes bound
on Si acceptors is observed in structures with a high level of doping with silicon. Using the method of magnetic depolarization
of hot photoluminescence, the probability of scattering of hot electrons is found to decrease substantially with increasing
temperature in the range 4–80 K. This effect is shown to be due to the ionization of donors. It is established that the probability
of inelastic scattering by neutral donors is several times greater than the probability of quasielastic electron-electron
scattering.
Fiz. Tekh. Poluprovodn. 33, 1235–1239 (October 1999) |
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