Extremely low noise InGaAs/InAlAs HEMT grown by MOCVD |
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| Authors: | Fujita S. Noda T. Wagai A. Hosoi S. Ashizawa Y. |
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| Affiliation: | Res. & Dev. Centre, Toshiba Corp., Kawasaki, Japan; |
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| Abstract: | MOCVD-grown InGaAs/InAlAs HEMTs with excellent noise performance comparable to that of MBE-grown devices have been successfully fabricated. A minimum noise figure lower than 0.30 dB has been obtained with an associated gain of approximately 15 dB at 12 GHz. Furthermore, devices in ceramic packages have exhibited a minimum noise figure of 0.42 dB.<> |
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