| 用于LTE频段的低噪声放大器的仿真与设计 |
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| 引用本文： | 杨帆,陈德智.用于LTE频段的低噪声放大器的仿真与设计[J].黑龙江电子技术,2014(7):87-89. |
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| 作者姓名： | 杨帆 陈德智 |
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| 作者单位： | 华东师范大学信息科学技术学院,上海200241 |
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| 摘 要： | 采用场效应晶体管ATF541M4设计了一个工作于LTE第38频段（2570MHz-2620MHz）的低噪声放大器。首先介绍设计低噪声放大器的理论基础，其次在ADS中进行仿真，最后将仿真结果与实测结果进行对比，得出结论。实测结果表明，该低噪声放大器在指定频率范围内噪声系数小于ldB，增益大于13dB，带内波动小于±0．25dB。
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| 关 键 词： | 低噪声放大器 噪声系数 增益 |
Simulation and design of LNA for LTE band |
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| Authors: | YANG Fan CHEN De-zhi |
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| Affiliation: | ( School of Information Science Technology, East China Normal University, Shanghai 200241, China) |
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| Abstract: | In this paper, a low noise amplifier （LNA） which based on FET ATF541M4 that working forLTE No. 38 band is designed. LNA theory is introduced at first. Then the LNA is simulated in ADS.Finally, the conclusion is made based on comparing the measurement and simulation results. Themeasurement results illustrate that this LNA＇ s gain is larger than 13dB, noise figure （NF） is smallerthan ldB, in-band flatness is smaller than ±0.25dB. |
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| Keywords: | LNA NF gain |
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