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高压大功率IGBT元器件开关特性的分析研究
引用本文:王瑞.高压大功率IGBT元器件开关特性的分析研究[J].黑龙江电子技术,2014(6):142-144.
作者姓名:王瑞
作者单位:宝鸡文理学院物理与信息技术系,陕西宝鸡721000
摘    要:自从IGBT器件出现之后,大量的研究人员对IGBT器件的开关特性进行了大量的研究,以便准确地预测和改善器件的开关瞬态特性.在实际应用中,IGBT器件的开关特性不仅和其物理结构、制作工艺以及工作的原理有着密切的关系,同时和其工作的环境也具有密切的关系.在IGBT器件工作的时候,常常受到驱动电压和电阻以及工作电压、集电极电流等的影响.因此研究工作环境对IGBT器件开关特性的影响,不断地改善其设计来优化其性能,成为研究的重点.论文详尽研究分析了功率器件IGBT的开关特性,对IGBT及其系统的理解、应用具有一定的指导意义.

关 键 词:IGB  功率器件  开关特性  研究

Study and analysis of the switching characteristics of high power IGBT devices
Authors:WANG Rui
Affiliation:WANG Rui (Department of Physics and Electric Information,Baoji University of Arts and Sciences,Baoji 721000,Shaanxi Province,China)
Abstract:Since IGBT devices emerges, the switching characteristics of IGBT devices were studied, in order to predict and improve the device accurate switching transient characteristics. In practical application, the switching characteristics of IGBT devices not only its physical structure, fabrication process and working principle are closely related, also and related to the working environment closely. When IGBT devices work, it is often influenced by the driving voltage and resistance and working voltage, the collector current. So the research work environment influence on IGBT switching characteristics, to optimize the performance and improve its design continuously, become the focus of the study.
Keywords:IGBT  power device  switching characteristics  research
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