| 表面注入D-RESURF器件耐压模型 |
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| 引用本文： | 李琦,王卫东,张杨,张法碧.表面注入D-RESURF器件耐压模型[J].半导体技术,2011,36(5):348-351. |
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| 作者姓名： | 李琦 王卫东 张杨 张法碧 |
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| 作者单位： | 桂林电子科技大学信息与通信学院,广西,桂林,541004;桂林电子科技大学信息与通信学院,广西,桂林,541004;桂林电子科技大学信息与通信学院,广西,桂林,541004;桂林电子科技大学信息与通信学院,广西,桂林,541004 |
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| 基金项目： | 广西自然科学基金，广西千亿元产业重大科技攻关工程项目，桂林电子科技大学博士科研启动基金 |
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| 摘 要： | 建立表面注入双重降低表面电场(D-RESURF)结构击穿电压模型。D-RESURF器件在衬底纵向电场和Pb区附加电场的影响下,漂移区电荷共享效应增强,优化漂移区掺杂浓度增大,器件导通电阻降低。分析漂移区浓度和厚度对击穿电压的影响,获得改善击穿电压和导通电阻折中关系的途径。在满足最优表面电场和完全耗尽条件下,导出吻合较好的二维RESURF判据。在理论的指导下,成功研制出900 V的D-RESURF高压器件。
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| 关 键 词： | 表面注入 双重降低表面电场 模型 击穿电压 导通电阻 |
Breakdown Voltage Model for D-RESURF Devices with Surface Implantation |
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| Li Qi,Wang Weidong,Zhang Yang,Zhang Fabi.Breakdown Voltage Model for D-RESURF Devices with Surface Implantation[J].Semiconductor Technology,2011,36(5):348-351. |
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| Authors: | Li Qi Wang Weidong Zhang Yang Zhang Fabi |
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| Affiliation: | (School of Information and Communication Engineering,Guilin University of Electronic Technology,Guilin 541004,China) |
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| Abstract: | An analytical model for the breakdown voltage of double RESURF(D-RESURF) devices with a surface implanted P-top region was presented.The optimal doping concentration in drift region was increased and the on-resistance was decreased by electric field modulation of the Pb region.The dependence of breakdown voltage on structure parameters of the device was calculated.An effective way to improve the trade-off between the breakdown voltage and on-resistance was also proposed.A 2-D RESURF condition was obtained and all analytical results were well verified by simulation results and previous experimental data,showing the validity of the model presented here.A 900 V double RESURF device was produced under the guide of the proposed model. |
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| Keywords: | surface implantation double RESURF(D-RESURF) model breakdown voltage on-resistance |
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