| Au/(Si/SiO2)/p-Si结构中电流输运机制的研究 |
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| 引用本文： | 张开彪,马书懿.Au/(Si/SiO2)/p-Si结构中电流输运机制的研究[J].电子元件与材料,2005,24(7):56-57,60. |
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| 作者姓名： | 张开彪 马书懿 |
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| 作者单位： | 西北师范大学物理与电子工程学院,甘肃,兰州,730070;西北师范大学物理与电子工程学院,甘肃,兰州,730070 |
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| 基金项目： | 国家自然科学基金;教育部科学技术基金 |
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| 摘 要： | 用射频磁控溅射法制备了Si/SiO2薄膜,利用Au/(Si/SiO2)/p-Si结构的I-V特性曲线对其输运机制进行了分析。结果表明,在较高的正向电场下,载流子主要是以电场协助隧穿(Fowler-Nordheim隧穿)方式通过氧化层,而在低场范围内和反向电场下,电流的产生则以热电子发射的方式为主。
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| 关 键 词： | 半导体技术 射频磁控溅射 I-V特性 电场协助隧穿 |
| 文章编号： | 1001-2028(2005)07-0056-02 |
Study of Carrier Transport Mechanisms in Au/(Si/SiO2)/p-Si Structure |
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| ZHANG Kai-biao,MA Shu-yi.Study of Carrier Transport Mechanisms in Au/(Si/SiO2)/p-Si Structure[J].Electronic Components & Materials,2005,24(7):56-57,60. |
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| Authors: | ZHANG Kai-biao MA Shu-yi |
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| Abstract: | The Si/SiO2 films were fabricated using the R.F magnetron sputtering technique. Carrier transport mechanism in Au/(Si/SiO2)/p-Si structure was studied using its I-V curves. The result indicated that carrier crossed silicon oxide films by the Fowler-Nordheim tunneling model at a high bias voltage. But at a low bias voltage, the current are induced by thermal electron emission. |
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| Keywords: | semiconductor technology R F magnetron sputtering I-V properties Fowler-Nordheim tunneling |
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