| Sideband Absorption and its Effects on Temperature Dependence of Local Vibrational Mode Main Absorption Band for Carbon Acceptor in Gallium Arsenide |
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| 作者姓名： | 杨瑞霞 李光平 |
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| 作者单位： | Yang Ruixia (杨瑞霞) Department of Electronic Engineering，Hebei University of Technology，Tianjin 300130，China$$$$Li Guangping (李光平) Tianjin Electronic Materials Research Institute，Tianjin 300192，China$$$$Received 8 January 1999$$$$ |
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| 摘 要： | １－ＩｎｔｒｏｄｕｃｔｉｏｎＣａｒｂｏｎｉｓａｐｒｅｖａｉｌｉｎｇｒｅｓｉｄｕａｌｉｍｐｕｒｉｔｙｉｎｕｎｄｏｐｅｄｓｅｍｉｉｎｓｕｌａｔｉｎｇ（ＳＩ）ＧａＡｓｃｒｙｓｔａｌｓｇｒｏｗｎｂｙｔｈｅｌｉｑｕｉｄｅｎｃａｐｓｕｌａｔｅｄＣｚｏｃｈｒａｌｓｋｉ（ＬＥＣ）ｔｅｃｈｎｉｑｕｅ，ａｎｄｉｔｐｒｅｄｏｍｉｎａｎｔｌｙｏｃｃｕｐｉｅｓｔｈｅａｒｓｅｎｉｃｓｉｔｅａｓａｃｃｅｐｔｏｒＣＡｓ．Ｓｉｎｃｅｔｈｅｍａｓｓｏｆｃａｒｂｏｎａｔｏｍｉｓｍｕｃｈｌｉｇｈｔｅｒｔｈａｎｔｈａｔｏｆａｒｓ…
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Sideband Absorption and its Effects on Temperature Dependence of Local Vibrational Mode Main Absorption Band for Carbon Acceptor in Gallium Arsenide |
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| Yang Ruixia.Sideband Absorption and its Effects on Temperature Dependence of Local Vibrational Mode Main Absorption Band for Carbon Acceptor in Gallium Arsenide[J].Rare Metals,1999(4). |
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| Authors: | Yang Ruixia |
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| Abstract: | The local vibrational mode (LVM) optical absorption band of carbon acceptor was investigated carefully. Because of the appearance of a sideband on the low energy side of the LVM main absorption band, it is found that the measured value of the integrated area for the main absorption band is sensitive to the choice of integration baseline wavenumber range (BWR). This is the main cause that the experimental results from different investigators show a wide spread for the temperature dependence of the integrated area. The origin of the sideband is also discussed. |
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| Keywords: | Carbon acceptor Local vibrational mode Excited state |
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