Enhanced relaxation oscillation frequency and reduced nonlinear K-factor in InGaAs/InGaAsP MQW lambda /4-shifted DFB lasers |
| |
| Authors: | Aoki M. Uomi K. Tsuchiya T. Suzuki M. Chinone N. |
| |
| Affiliation: | Central Res. Lab., Hitachi Ltd., Tokyo, Japan; |
| |
| Abstract: | The relaxation oscillation frequency, f/sub r/, of 1.55 mu m InGaAs/InGaAsP MQW lambda /4-shifted DFB lasers was doubled by increasing the carrier injection efficiency into each quantum well, which results from an optimised bandgap energy and optimised thickness of the barrier layers. The nonlinear K-factor which determines the maximum modulation bandwidth through the damping phenomenon can be reduced by adopting a p-type modulation doped MQW structure in the active layer.<> |
| |
| Keywords: | |
|
|
