| 不同偏置条件下PMOSFETs的剂量率效应研究 |
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| 引用本文： | 兰博,郭旗,孙静,崔江维,李茂顺,陈睿,费武雄,赵云.不同偏置条件下PMOSFETs的剂量率效应研究[J].半导体学报,2010,31(5):054004-4. |
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| 作者姓名： | 兰博 郭旗 孙静 崔江维 李茂顺 陈睿 费武雄 赵云 |
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| 作者单位： | Xinjiang;Technical;Institute;Physics;Chemistry;Chinese;Academy;Sciences;Laboratory;Electronic;Information;Materials;Devices;Graduate;University; |
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| 摘 要： | 研究了不同剂量率、不同偏置条件下，PMOSFETs的辐照响应特性；并对高剂量率辐照后的器件进行了与低剂量率辐照等时的室温退火。结果表明，随着剂量率的降低，PMOSFETs阈值电压的漂移更加明显；不同偏置条件、不同剂量率范围内表现出TDE和ELDRS两种不同的剂量率效应。利用亚阈分离技术对影响阈值电压漂移的氧化物陷阱电荷和界面态进行了详细的机理分析，认为ELDRS效应的产生是由界面态密度的差异导致的。
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| 关 键 词： | 金属氧化物半导体场效应晶体管 剂量率效应 压条 通道 阈值电压漂移 低剂量率 时间依赖性 剂量反应 |
Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions |
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| Lan Bo,Guo Qi,Sun Jing,Cui Jiangwei,Li Maoshun,Chen Rui,Fei Wuxiong and Zhao Yun.Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions[J].Chinese Journal of Semiconductors,2010,31(5):054004-4. |
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| Authors: | Lan Bo Guo Qi Sun Jing Cui Jiangwei Li Maoshun Chen Rui Fei Wuxiong and Zhao Yun |
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| Affiliation: | Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China; Graduate University of the Chinese Academy of Sciences,;Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China;Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China;Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China; Graduate University of the Chinese Academy of Sciences,;Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China; Graduate University of the Chinese Academy of Sciences,;Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China; Graduate University of the Chinese Academy of Sciences,;Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China; Graduate University of the Chinese Academy of Sciences,;Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China; Graduate University of the Chinese Academy of Sciences, |
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| Abstract: | The total-dose response and annealing effect of p-channel metal oxide semiconductor field-effect transistors (PMOSFETs) were investigated at various dose rates and biasing conditions. The results show that the shift of threshold voltage is more obvious when the dose rate is decreased. Under the various dose rates and biasing conditions, some have exhibited a time-dependent effect and others showed enhanced low-dose-rate sensitivity (ELDRS). Finally, using the subthreshold-separating method, the threshold-voltage shift is separated into shifts due to interface states and oxide-trapped charges, and the underlying mechanisms of the observed effects are discussed. It has been indicated that the ELDRS effect results from the different quantities of the interface states generated at high and low dose rates. |
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| Keywords: | PMOSFETs bias ELDRS TDE interface states oxide-trapped charge |
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