| 多晶硅TFT热载流子效应的模拟研究 |
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| 引用本文： | 陶晶晶,岑晨,刘小红,顾晓峰,钟传杰,于宗光. 多晶硅TFT热载流子效应的模拟研究[J]. 电子与封装, 2009, 9(3): 11-14 |
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| 作者姓名： | 陶晶晶 岑晨 刘小红 顾晓峰 钟传杰 于宗光 |
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| 作者单位： | 1. 江南大学信息工程学院,江苏,无锡,214122
2. 江南大学信息工程学院,江苏,无锡,214122;中国电子科技集团公司第五十八研究所,江苏,无锡,214035 |
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| 基金项目： | 江苏省高等学校大学生实践创新训练计划，教育部新世纪优秀人才支持计划，江苏省自然科学基金 |
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| 摘 要： | 热载流子效应引起的器件电学特性退化会严重影响电路的工作性能。文章结合多晶硅薄膜晶体管沟道电流的理论模型,讨论了热载流子效应与界面陷阱的关系。沟道载流子在大的漏电场牵引下,运动到漏结附近获得很大的能量从而成为热载流子。如果热载流子能量超过Si-SiO2界面势垒高度,会注入到栅氧层或陷落到界面陷阱,使阈值电压和沟道电流发生退化现象。同时,对多晶硅薄膜晶体管输出特性进行了模拟分析,模拟结果与理论模型基本一致。
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| 关 键 词： | 多晶硅薄膜晶体管 热载流子效应 界面陷阱 模拟 |
A Study of Hot Carrier Effects on Polysilicon Thin Film Transistors by Simulation |
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| TAO Jing-jing,CEN Chen,LIU Xiao-hong,GU Xiao-feng,ZHONG Chuan-jie,YU Zong-guang. A Study of Hot Carrier Effects on Polysilicon Thin Film Transistors by Simulation[J]. Electronics & Packaging, 2009, 9(3): 11-14 |
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| Authors: | TAO Jing-jing CEN Chen LIU Xiao-hong GU Xiao-feng ZHONG Chuan-jie YU Zong-guang |
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| Affiliation: | TAO Jing-jing1,CEN Chen1,LIU Xiao-hong1,GU Xiao-feng1,ZHONG Chuan-jie1,YU Zong-guang1,2 (1.School of Information Technology,Jiangnan University,Wuxi 214122,China,2.The 58th Research Institute of China Electronics Technology Group Corporation,Wuxi 214035,China) |
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| Abstract: | The degradation of device electrical characteristics induced by hot carrier effects can influence seriously the circuit performance. The relation between the hot carrier effects and the interface traps was discussed based on the physics model of channel current in polysilicon thin film transistors. Because of big electrical field,carriers get so much energy that they become hot carriers after moving to the drain junction. If the energy of hot carriers exceeds interface barrier height between silicon and sil... |
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| Keywords: | polysilicon thin film transistor hot carrier effect interface trap simulation |
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