930-V 170-m/spl Omega//spl middot/cm/sup 2/ lateral two-zone RESURF MOSFETs in 4H-SiC with NO annealing |
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| Authors: | Wang W Banerjee S Chow TP Gutmann RJ |
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| Affiliation: | Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA; |
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| Abstract: | The first lateral two-zone reduced surface field MOSFETs in 4H-SiC with NO annealing are reported. Interface properties of 4H-SiC-SiO/sub 2/ are improved, with inversion layer field-effect mobility increased to 25 cm/sup 2//V/spl middot/s, five times higher than that of dry reoxidation process, and with channel resistance significantly reduced. Devices are normally off with low leakage current. Threshold voltage is around 3 V. Blocking voltage of 930 V and specific on-resistance of 170 m/spl Omega//spl middot/cm/sup 2/ were obtained. Large-area devices with multifinger geometry are also demonstrated with scaled-up current. The output characteristics exhibit excellent linear and saturation regions. |
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