| 制备工艺对ZnO薄膜的结构与光学性质的影响 |
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| 引用本文： | 赵银平,丁瑞钦,朱慧群,胡怡,王忆,汪河洲. 制备工艺对ZnO薄膜的结构与光学性质的影响[J]. 电子元件与材料, 2007, 26(2): 20-23 |
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| 作者姓名： | 赵银平 丁瑞钦 朱慧群 胡怡 王忆 汪河洲 |
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| 作者单位： | 中山大学光电材料与技术国家重点实验室,广东,广州,510275;五邑大学薄膜与纳米材料研究所,广东,江门,529020;五邑大学薄膜与纳米材料研究所,广东,江门,529020;暨南大学化学系,广东,广州,510632;中山大学光电材料与技术国家重点实验室,广东,广州,510275 |
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| 基金项目： | 国家重点基础研究发展计划(973计划) , 广东省自然科学基金 , 广东省江门市科技攻关项目 |
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| 摘 要： | 利用射频磁控反应溅射技术生长出具有高度晶面(0002)取向的ZnO外延薄膜。通过AFM、XRD、吸收光谱和荧光光谱等测试手段,分别研究分析了不同衬底、不同溅射气氛和退火对ZnO薄膜结构及光学性质的影响。研究表明,在200℃低温生长的硅基ZnO薄膜具有几百纳米的氧化锌准六角结构外形;当氧氩比为4:1(质量流量比)时,吸收谱激子峰最佳;退火后,激子峰(363 nm)加强,同时出现了402 nm的本征氧空位紫光发射。
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| 关 键 词： | 半导体技术 射频磁控反应溅射 ZnO外延薄膜 光致发光 |
| 文章编号： | 1001-2028（2007）02-0020-04 |
| 修稿时间： | 2006-08-24 |
Influence of fabrication technique on structure and optical properties of ZnO thin films |
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| ZHAO Yin-ping,DING Rui-qin,ZHU Hui-qun,HU Yi,WANG Yi,WANG He-zhou. Influence of fabrication technique on structure and optical properties of ZnO thin films[J]. Electronic Components & Materials, 2007, 26(2): 20-23 |
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| Authors: | ZHAO Yin-ping DING Rui-qin ZHU Hui-qun HU Yi WANG Yi WANG He-zhou |
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| Affiliation: | 1. State Key Laboratory of Optoelectronics, Zhongshan University, Guangzhou 510275, China; 2. Institute of Thin Film and Nanomaterials, Wuyi University, Jiangmen 529020, China; 3. Department of Chemistry, Jinan University, Guangzhou 510632, China |
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| Abstract: | Low temperature epitaxial growth of highly c-axis(0002) oriented ZnO thin films were achieved on n-Si(001)and quartz glass substrates separately by reactive radio frequency(RF) magneto co-sputtering technique.The properties of the samples were studied by XRD,AFM,ABS and PL.It is found that the structure and optical properties of ZnO thin films are influenced by the sputtering atmosphere and the anneal procedure.A quasi-hexagonal structure of ZnO thin film is observed by AFM when it was deposited on n-Si(001) substrate at low temperature.The strongest exciton peak in the absorption spectrum(ABS) appears at the ratio of 4 : 1(O2 /Ar ratio).After annealing treatment,the exciton peak(363 nm) was enhanced,and native donor defects(Vo) luminescence of 402 nm was observed accordingly. |
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| Keywords: | semiconductor reactive RF magnetic co-sputtering ZnO epitaxial thin film photoluminescence |
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