Growth and properties of high-quality very-thin SOS films

The increased emphasis on submicron geometry CMOS/SOS devices has created a need for high quality silicon-on-sapphire films with thicknesses of the order of 0.1 to 0.2 µm. To date the only viable way of producing high quality SOS films with these thicknesses has been through the application of recrystallization and regrowth techniques. The need for as-grown, high-quality, very-thin SOS films has prompted a study of film quality vs growth rate for films with thicknesses in the 0.1 to 0.2 µm range as a possible way of producing thin high-quality SOS films. It has been found that film quality increased as the growth rate increased. It was possible to produce films as thin as 0.1 µm with mobilities nearly as high as 1 µm films, if the film growth rate was higher than 4 µm/ min.