| 用于MEMS的选择性形成多孔硅技术的研究 |
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| 引用本文： | 谢克文,王晓红,陈兢,刘理天. 用于MEMS的选择性形成多孔硅技术的研究[J]. 半导体学报, 2002, 23(6): 668-672. DOI: 10.3969/j.issn.1674-4926.2002.06.021 |
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| 作者姓名： | 谢克文 王晓红 陈兢 刘理天 |
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| 作者单位： | 清华大学 微电子学研究所,北京,100084 |
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| 摘 要： | 提出了一套采用扩散工艺在低掺杂的硅衬底上选择性形成多孔硅牺牲层,并制作了MEMS器件结构的工艺流程,进行了工艺流水.对得到的结果进行了详细的讨论.对于KOH溶液释放多孔硅牺牲层技术进行了研究.
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| 关 键 词： | 多孔硅 扩散 牺牲层 |
| 文章编号： | 0253-4177(2002)06-0668-05 |
| 修稿时间： | 2001-09-28 |
Investigation of Selectively Forming Porous Silicon Used in MEMS |
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| Xie Kewen,Wang Xiaohong,Chen Jing and Liu Litian. Investigation of Selectively Forming Porous Silicon Used in MEMS[J]. Chinese Journal of Semiconductors, 2002, 23(6): 668-672. DOI: 10.3969/j.issn.1674-4926.2002.06.021 |
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| Authors: | Xie Kewen Wang Xiaohong Chen Jing Liu Litian |
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| Abstract: | Forming porous silicon selectively which is used as a sacrificial layer on the low doped silicon substrate by using diffusion process and then fabricating free standing microstructures is presented.A process run is made and the results of the experiment are discussed in detail.The technology of removal porous silicon using KOH solution is also studied. |
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| Keywords: | porous silicon diffusion sacrificial layer MEMS |
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