| SiC对MoSi2烧结行为的影响 |
| |
| 引用本文： | 张厚安 王德志. SiC对MoSi2烧结行为的影响[J]. 功能材料, 1999, 30(1): 107-108 |
| |
| 作者姓名： | 张厚安 王德志 |
| |
| 作者单位： | [1]湘潭工学院机械系 [2]中南工业大学材料系 |
| |
| 摘 要： | 通过排水法测定了ＭｏＳｉ２和ＳｉＣ／ＭｏＳｉ２烧结块的密度，讨论了烧结温度的影响。结果表明，ＳｉＣ的加入提高了ＭｏＳｉ２材料的烧结开始温度约２００℃。
|
| 关 键 词： | 烧结 碳化硅 二硅化钼 复合材料 |
The Effects 0f Added SiC on Sintering Process of MoSi_2 |
| |
| ZHANG Houan, WANG Dezhi, LlU Xingyu. The Effects 0f Added SiC on Sintering Process of MoSi_2[J]. Journal of Functional Materials, 1999, 30(1): 107-108 |
| |
| Authors: | ZHANG Houan WANG Dezhi LlU Xingyu |
| |
| Abstract: | The density of sintered bulk of MoSi2 and SiC/MoSi2 has being measured by draining of water. And the paper studied the effectsof sintered temperature. lt shows that the incipient sintering temperature of MoSi2 has being increased about 200b by adding SiC. |
| |
| Keywords: | MoSi_2 sinter: SiC |
| 本文献已被 CNKI 维普 等数据库收录！ |
