基片掺杂与热氧化SiO2薄膜驻极体的电荷贮存特性

运用干－湿－干温热氧化工艺，在４种不同掺杂类型的单晶硅基片上，制备成功非晶态ＳｉＯ２薄膜驻极体。恒栅压电晕充电，等温表面电位衰减及热刺激放电实验表明，不同类型基片的ＳｉＯ２薄膜其电荷动态特性差异较大，基片的掺杂成份和掺杂浓度直接影响基上二氧化硅驻极体枳地存稳定性随着掺杂浓度的增大而有所下降，ＴＳＤ放电电流峰的形状与位置也会随着掺杂成份和浓度的变化而改变。分析表明，造成这一现象的原因在于：掺杂成份在

The Relationship Between Substrate Doping and Charges Storage Characteristics of Hot Oridized SiO_2 Film Electret

Amorphous SiO2 thin film electrets were prepared on the single crystalline silicon substrates of four different doping via dry - wet -dry high temperature hot oxidization. Experiments showed that the dynamic characteristics of trapped charges in SiO2 electrets based ondifferent kind wafers varied significantly, and the doping constituents and concentration in the wafers directly influenced the properties of SiO2 film electret. The stability of storage charges reduced as the doping concentration increased while the shape and position of TSD cur-rent peak changed as a function of doping variation. The reason was that doping constituents entered SiO2 film via diffusion in hot oxi-dizaiton and changed the inner microstructure, and furthermore changed the properties of charge storage. All of above will be a good help to the study on the charge storage mechanism of the SiO2 thin film electret.