| 不同掺杂对Yb半导的（Ba,Sr）TiO3系PTCR材料性能的影响 |
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| 引用本文： | 米庆 唐子龙. 不同掺杂对Yb半导的（Ba,Sr）TiO3系PTCR材料性能的影响[J]. 功能材料, 1999, 30(3): 290-292 |
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| 作者姓名： | 米庆 唐子龙 |
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| 作者单位： | 清华大学材料系 |
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| 摘 要： | 研究了不同掺杂方式对ＰＴＣＲ材料电学性能的影响，结果表明，Ｙｂ一次掺杂ＢａＴｉＯ３电阻变化“Ｕ”型曲线，低阻区为０．１ｍｏｌ％～０．３ｍｏｌ％，其移峰效率为３～５℃／ｍｏｌ。二次单一掺杂Ｙｂ提高电阻率，降低对升阻比，二次单一掺杂Ｍｎ提高电阻率与升阻经，二次Ｙｂ，Ｍｎ共掺杂可降低电阻率，提高升阻比，并探讨了二者配合作用的机理，Ｙｂ：Ｍｎ＝１：１效果最佳。
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| 关 键 词： | PTCR 掺杂 电子补偿 空位补偿 电学性能 |
The Effect of Doping Methods on the Characteristics of the Ytterbium Semiconducted (Ba,Sr)TiO3 PTCR Materials |
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| MI Qing,TANG Zilong,ZHANG Zhongtai. The Effect of Doping Methods on the Characteristics of the Ytterbium Semiconducted (Ba,Sr)TiO3 PTCR Materials[J]. Journal of Functional Materials, 1999, 30(3): 290-292 |
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| Authors: | MI Qing TANG Zilong ZHANG Zhongtai |
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| Affiliation: | MI Qing,TANG Zilong,ZHANG Zhongtai Department of Materials Science and Engineering,Tsinghua University,Beijing,100084,China |
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| Abstract: | The influence on the character of PTCR materials with different doping method was studied.The result indicates:the U curve of resistivity is gained with the low resistivity at the range 0.1mol%0.3mol% by the Yb first-doped;the effect of Curie point shifting is 35/mol.The resistivity increases and the Rmax/Rmain decreases with Yb second-doped;the resistivity and Rmax/Rmain increases with Mn second-doped;but the resistivity decreases and Rmax/Rmain increases with Yb Mn second-codoped.The mechanism of codoped was also studied.The result is the best with YbMn=11 codoped. |
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| Keywords: | PTCR(Positive Temperature Coefficient Resistivity) doped electron compensation vacancy compensation |
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