| Cu—TiN复合薄膜的微结构与电性能 |
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| 引用本文： | 李戈扬,吴亮.Cu—TiN复合薄膜的微结构与电性能[J].功能材料,1999,30(3):283-284. |
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| 作者姓名： | 李戈扬 吴亮 |
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| 作者单位： | 上海交通大学金属基复合材料国家重点实验室 |
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| 摘 要： | 本文采用ＳＥＭ，ＥＤＡＸ和ＴＥＭ等手段研究了多靶磁控溅射制备的Ｃｕ－ＴｉＮ复合薄膜，并测定了薄膜的电阻率。研究表明，复全薄膜的微结构随ＴｉＮ含量及其片高温发生明显变化，其电阻率在基片温度约为２００℃时取得极不值，约为室温沉积薄膜电位率的１／４。
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| 关 键 词： | 磁控溅射 复合薄膜 微结构 电性能 |
The Microstructure and Electrical Property of Cu-TiN Composite Film |
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| LI Geyang,WU Liang,SHI Xiaorong,ZHANG Liuqiang,LI Pengxing State Key Lab. for MMCs,Shanghai Jiao Tong University,Shanghai,China.The Microstructure and Electrical Property of Cu-TiN Composite Film[J].Journal of Functional Materials,1999,30(3):283-284. |
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| Authors: | LI Geyang WU Liang SHI Xiaorong ZHANG Liuqiang LI Pengxing State Key Lab for MMCs Shanghai Jiao Tong University Shanghai China |
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| Affiliation: | LI Geyang,WU Liang,SHI Xiaorong,ZHANG Liuqiang,LI Pengxing State Key Lab. for MMCs,Shanghai Jiao Tong University,Shanghai,200030,China |
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| Abstract: | Cu-TiN composite film was prepared by multitargets magnetron sputtering system.The microstructure of composite film was studied by SEM,EDAX and TEM,its resistivity was measured.The results show that the microstructure of composite film varies obviously with increase of substrate temperature and the resistivity of composite film reaches the minimum at substrate temperature about 200,which is about 1/4 of that of the film deposited at ambient temperature. |
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| Keywords: | magnetron sputtering Cu-TiN composite film microstructure |
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