| 恒栅流负电晕充电的Si基SiO2驻极体的电荷稳定性 |
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| 引用本文： | 宋聚平 沈绍群. 恒栅流负电晕充电的Si基SiO2驻极体的电荷稳定性[J]. 功能材料, 1999, 30(6): 646-648 |
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| 作者姓名： | 宋聚平 沈绍群 |
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| 作者单位： | [1]同济大学波耳固体物理研究所 [2]复旦大学电子工程系 |
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| 基金项目： | 国家自然科学基金!资助项目（59682003） |
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| 摘 要： | 本文讨论了在不同充电参数条件下的恒恒流电晕充电的Ｓｉ基ＳｉＯ２薄膜驻极体的空间电荷储存稳定性，并和栅控恒压电晕充电的结果进行了比较。利用电容－电压（Ｃ－Ｖ）分析技术确定了空间电荷重心的漂移，并利用等温表面电位衰减测量，开路热刺激放电实验及Ｃ－Ｖ分析技术讨论了Ｓｉ基ＳｉＯ２薄膜驻极体的空间电荷储存和输动特性。
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| 关 键 词： | 恒栅流电晕充电 二氧化硅 驻极体 电荷稳定性 |
The Charge Stability of SiO_2 Electret on Si Substrate by Constant Current Corona Charging |
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| SONG Juping ,XIA Zhongfu ,LIN Huamao ,ZHANG Xiaoqing ,SHEN Shaoqun Pohl Institute of Solid State Physics,Tongji University,Shanghai,,China. The Charge Stability of SiO_2 Electret on Si Substrate by Constant Current Corona Charging[J]. Journal of Functional Materials, 1999, 30(6): 646-648 |
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| Authors: | SONG Juping XIA Zhongfu LIN Huamao ZHANG Xiaoqing SHEN Shaoqun Pohl Institute of Solid State Physics Tongji University Shanghai China |
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| Affiliation: | SONG Juping 1,XIA Zhongfu 1,LIN Huamao 1,ZHANG Xiaoqing 1,SHEN Shaoqun 2 1 Pohl Institute of Solid State Physics,Tongji University,Shanghai,200092,China, 2 Department of Electron Engineering,Fudan University,Shanghai,200433,China |
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| Abstract: | In this paper,the charge storage stability for SiO 2 film electret on Si substrate by constant current corona charging with a grid at different charging parameters was discussed and it was compared to that by constant voltage corona charging with a grid.The shift of the mean charge depth in the sample was determined by Capacitance-Voltage (C-V) Analysis technique.The storage and transport of the space charges in the SiO 2 electret was studied by means of isothermal surface potential decay measurement,open circuit Thermally Stimulated Discharge (TSD) experiment and C-V analysis technique. |
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| Keywords: | corona charging with constant grid current SiO 2 electret charging stability |
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