| CMOS双层可变功函数金属栅技术 |
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| 引用本文： | 段宝兴,杨银堂. CMOS双层可变功函数金属栅技术[J]. 功能材料与器件学报, 2010, 16(2) |
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| 作者姓名： | 段宝兴 杨银堂 |
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| 作者单位： | 西安电子科技大学,微电子学院,宽禁带半导体材料与器件教育部重点实验室,陕西,西安,710071;西安电子科技大学,微电子学院,宽禁带半导体材料与器件教育部重点实验室,陕西,西安,710071 |
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| 基金项目： | 国家杰出青年科学基金，中国博士后科学基金 |
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| 摘 要： | 针对发展高速、低功耗CMOS电路,分析了CMOS技术对多层金属栅的要求;对于不同金属厚度的双层金属栅,利用MOS系统能带的变化得出半导体与多层金属功函数差取决于底层金属的功函数,这为只通过调节底层金属功函数以达到改变CMOS阈值电压提供了理论依据;利用不同厚度的双层金属系统能带变化分析获得,当多层金属栅的底层金属厚度小于其最大偶极层厚度时,功函数较厚膜材料变大,达到"厚度调变功函数"效应。
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| 关 键 词： | CMOS 双层金属栅 阈值电压 调变功函数 |
CMOS Bi-layer Metal Gate Technology with Tunable Work Function |
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| DUAN Bao-xing,YANG Yin-tang. CMOS Bi-layer Metal Gate Technology with Tunable Work Function[J]. Journal of Functional Materials and Devices, 2010, 16(2) |
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| Authors: | DUAN Bao-xing YANG Yin-tang |
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| Abstract: | Multi-layer metal gate technology is required to develop the high speed and low power consumption CMOS circuit.For the bi-layer metal gate with different thickness,the difference of work function between the semiconductor and metal gate stacks lies on the undermost metal gate,which offers a theory foundation to alter the CMOS threshold voltage by only modulation work function of the undermost metal gate.When the thickness of undermost metal gate iS less than that of its maximal dipole layer,the work function iS more than that of thick film.and the effect of tunable work function is obtained by analyzing the energy band of bi-layer metal. |
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| Keywords: | CMOS CMOS Bi-layer Metal-Gate Threshold Voltage Tunable Work Function |
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