| GaAs/Ga_(1-x)Al_xAs量子阱线中类氢杂质的束缚能和光致电离截面 |
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| 引用本文： | 刘建军,苏会,关荣华,杨国琛. GaAs/Ga_(1-x)Al_xAs量子阱线中类氢杂质的束缚能和光致电离截面[J]. 半导体学报, 2003, 24(6): 561-566 |
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| 作者姓名： | 刘建军 苏会 关荣华 杨国琛 |
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| 作者单位： | 河北师范大学物理学院，中国科学院物理研究所，河北工业大学物理所，河北工业大学物理所 石家庄050016，河北工业大学物理所，天津300130，北京100080，天津300130，华北电力大学应用物理系，保定071003，天津300130 |
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| 基金项目： | 河北省自然科学基金 ( No.10 2 137)，河北省教育厅自然科学基金 ( No.2 0 0 10 4)资助项目~~ |
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| 摘 要： | 通过在波函数中考虑量子线的限制方向和非限制方向的相关性,计算了Ga As/ Ga1 - x Alx As量子阱线中类氢杂质的束缚能和光致电离截面.结果表明光致电离截面的大小受量子线尺寸的影响,并且对于相同尺寸的量子线,有限深势阱中杂质态的光致电离截面要比无限深势阱中的大.与他人的结果比较发现,所选波函数改进了体系的束缚能,并使光致电离截面减小,这使得结果更为合理
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| 关 键 词： | 光致电离截面 束缚能 类氢杂质 量子阱线 |
| 文章编号： | 0253-4177(2003)06-0561-06 |
| 修稿时间： | 2002-11-13 |
Binding Energy and Photoionization of Hydrogenic Impurities in GaAs/Ga1-xAlxAs Quantum Well Wires |
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| Liu Jianjun,Su Hui,Guan Ronghua,Yang Guochen. Binding Energy and Photoionization of Hydrogenic Impurities in GaAs/Ga1-xAlxAs Quantum Well Wires[J]. Chinese Journal of Semiconductors, 2003, 24(6): 561-566 |
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| Authors: | Liu Jianjun Su Hui Guan Ronghua Yang Guochen |
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| Abstract: | The binding energy and the photon energy dependence of the photoionization cross-section are calculated for a hydrogenic impurity in GaAs/Ga 1-xAl xAs quantum well wires.The correlation between confined and non-confined direction of the wire in the variational wave function is taken into account.The results show that the photoionization cross-sections are affected by the width of the wire and that their magnitudes are larger than those in infinite potential quantum well wires.In comparison with previous's results,the variational wave function improves the binding energy and decreases the value of photoionization cross-sections of the hydrogenic impurities,which makes the results more reasonable. |
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| Keywords: | photoionization cross-section binding energy hydrogenic impurity quantum well wire |
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