Erbium-doped phosphosilicate glass waveguide amplifier fabricated by PECVD |
| |
| Authors: | Shuto K. Hattori K. Kitagawa T. Ohmori Y. Horiguchi M. |
| |
| Affiliation: | NTT Opto-Electron. Labs., Ibaraki, Japan; |
| |
| Abstract: | An Er-doped waveguide amplifier fabricated by plasma enhanced chemical vapour deposition is described. A maximum net gain of 5 dB and a gain coefficient of 0.67 dB/cm are obtained in a 0.48 wt.% Er-doped waveguide pumped at 420 mW at a wavelength of 0.98 mu m. The 0 dB gain threshold is 23 mW.<> |
| |
| Keywords: | |
|
