| 脉冲激光淀积法在Pt/TiO_2/SiO_2/Si(001)衬底上制备Pb(Ta_(0.05)Zr_(0.45)Ti_(0.50))O_3薄膜的铁电性质研究 |
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| 引用本文： | 窦敖川,朱涛,刘治国.脉冲激光淀积法在Pt/TiO_2/SiO_2/Si(001)衬底上制备Pb(Ta_(0.05)Zr_(0.45)Ti_(0.50))O_3薄膜的铁电性质研究[J].功能材料,1999(6). |
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| 作者姓名： | 窦敖川 朱涛 刘治国 |
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| 作者单位： | 镇江师范专科学校物理系!江苏镇江212003(窦敖川)，南京大学固体微结构物理国家重点实验室!江苏南京210093(朱涛，刘治国) |
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| 摘 要： | 用脉冲激光淀积方法在Ｐｔ／ＴｉＯ２／ ＳｉＯ２／ Ｓｉ（００１） 衬底上制备了掺Ｔａ 的ＰＺＴ 薄膜。此薄膜显示了理想的铁电性。漏电流特性表明这种异质结构中Ｓｃｈｏｔｔｋｙ 场发射机制起主要作用。扫描电镜形貌照片表明ＰＺＴ 薄膜结晶很好并且异质结构界面无明显扩散。
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| 关 键 词： | PTZT薄膜 脉冲激光淀积 铁电性 漏电流 |
The Properties of Pb(Ta_(0.05)Zr_(0.45)Ti_(0.50))O_3 Films Deposited on Pt/TiO_2/SiO_2/Si(001) Substrates by Pulsed Laser Deposition |
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| DOU Aochuan ,ZHU Tao ,LIU Zhiguo Dept. of Physics,Zhenjiang Teachers College,Zhenjiang,China, National Laboratory of Solid State Microstructures,Nanjing University,Nanjing,China.The Properties of Pb(Ta_(0.05)Zr_(0.45)Ti_(0.50))O_3 Films Deposited on Pt/TiO_2/SiO_2/Si(001) Substrates by Pulsed Laser Deposition[J].Journal of Functional Materials,1999(6). |
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| Authors: | DOU Aochuan ZHU Tao LIU Zhiguo Dept of Physics Zhenjiang Teachers College Zhenjiang China National Laboratory of Solid State Microstructures Nanjing University Nanjing China |
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| Affiliation: | DOU Aochuan 1,ZHU Tao 2,LIU Zhiguo 2 1 Dept. of Physics,Zhenjiang Teachers College,Zhenjiang,212003,China, 2 National Laboratory of Solid State Microstructures,Nanjing University,Nanjing,210093,China |
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| Abstract: | The Ta-doped PZT (PTZT) films were fabricated on Pt/TiO 2/SiO 2/Si(001) substrates by pulsed laser deposition.The PTZT ferroelectric capacitors show good fatigue and retention properties.The leakage current is dominated by Schottky field emission mechanism.The SEM morphology photographs show that the PTZT films are well crystalized and that almost no obvious interdiffusion occurs across the interfaces. |
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| Keywords: | PTZT thin film pulsed laser deposition ferroelectricity leakage current |
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