| Ce_(1-x)Sm_xO_(2-y)缓冲层的化学溶液法制备 |
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| 引用本文： | 雷和畅,朱雪斌,宋文海,孙玉平. Ce_(1-x)Sm_xO_(2-y)缓冲层的化学溶液法制备[J]. 稀有金属材料与工程, 2008, 0(Z4) |
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| 作者姓名： | 雷和畅 朱雪斌 宋文海 孙玉平 |
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| 作者单位： | 中国科学院固体物理研究所; |
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| 基金项目： | 国家重点基础研究发展计划(2006CB601005); 国家自然科学基金(10774146,50672099,50701042); 中国科学院院长奖获得者科研启动专项资金 |
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| 摘 要： | 采用化学溶液法在NiW(200)基带上进行了Ce1-xSmxO2-y(x=0,0.2,1)缓冲层的制备及生长机理研究。结果表明,化学溶液法可以成功制备出双轴织构的Ce1-xSmxO2-y缓冲层;在x=0和x=0.2的情况下,所制备的缓冲层有裂纹产生;但是随着x的增加,开裂现象被逐步抑制。对x=1的Sm2O3缓冲层而言,当厚度增加到120nm时依然没有产生裂纹,表明Sm2O3缓冲层可以作为单一缓冲层而得以使用。
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| 关 键 词： | 涂层导体 缓冲层 化学溶液法 |
Fabrication of Ce_(1-x)Sm_xO_(2-y) Buffer Layers Using Chemical Solution Deposition Method |
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| Lei Hechang,Zhu Xuebin,Song Wenhai,Sun Yuping. Fabrication of Ce_(1-x)Sm_xO_(2-y) Buffer Layers Using Chemical Solution Deposition Method[J]. Rare Metal Materials and Engineering, 2008, 0(Z4) |
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| Authors: | Lei Hechang Zhu Xuebin Song Wenhai Sun Yuping |
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| Affiliation: | Lei Hechang,Zhu Xuebin,Song Wenhai,Sun Yuping (Institute of Solid State Physics,Chinese Academy of Sciences,Hefei 230031,China) |
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| Abstract: | We report the fabrication and growth mechanism of Ce1-xSmxO2-y (x=0, 0.2, 1)/NiW (200) single buffer layers using chemical solution deposition method. The results show that highly biaxially-textured Ce1-xSmxO2-y buffer layer can be prepared by chemical solution deposition method. When x=0 and x=0.2, there were some cracks in the buffer layer, but the critical thickness of cracking is improved with increasing x. For x=1, namely the Sm2O3 buffer layer, no cracks appear even the thickness reaches about 120 nm.... |
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| Keywords: | coated conductors buffer layers chemical solution deposition |
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