SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHzfmax |
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| Authors: | Koester SJ Hammond R Chu JO Mooney PM Ott JA Perraud L Jenkins KA Webster CS Lagnado I de la Houssaye PR |
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| Affiliation: | IBM Thomas J. Watson Res. Center, Yorktown Heights, NY; |
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| Abstract: | The dc and microwave results of Si0.2Ge0.8/Si0.7Ge0.3 pMODFETs grown on silicon-on-sapphire (SOS) substrates by ultrahigh vacuum chemical vapor deposition are reported. Devices with Lg=0.1 μm displayed high transconductance (377 mS/mm), low output conductance (25 mS/mm), and high gate-to-drain breakdown voltage (4 V). The dc current-voltage (I-V) characteristics were also nearly identical to those of control devices grown on bulk Si substrates. Microwave characterization of 0.1×50 μm2 devices yielded unity current gain (fT) and unilateral power gain (f max) cutoff frequencies as high as 50 GHz and 116 GHz, respectively. Noise parameter characterization of 0.1×90 μm2 devices revealed minimum noise figure (Fmin) of 0.6 dB at 3 GHz and 2.5 dB at 20 GHz |
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